TY  - JOUR
T1  - High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing
A1  - Yu, H-Y.
A1  - Cheng, S.
A1  - Park, J-H.
A1  - Okyay, A.K.
A1  - Onbasli, M.C.
A1  - Ercan, B.
A1  - Nishi, Y.
A1  - Saraswat, K.C.
JA  - Applied Physics Letters
Y1  - 2010
VL  - 97
SP  - 063503-1
EP  - 3
N1  - 07.11.2011
M2  - doi: 10.1063/1.3478242
ER  -