The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD
Type of publication: | Article |
Citation: | |
Publication status: | Accepted |
Journal: | Current Applied Physics |
Volume: | 9 |
Year: | 2009 |
Pages: | 472-477 |
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Authors | |
Added by: | [] |
Total mark: | 5 |
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