Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
Type of publication: | Article |
Citation: | |
Publication status: | Accepted |
Journal: | J of Physics D |
Volume: | 41 |
Year: | 2008 |
Pages: | 155317-1--10 |
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Authors | |
Added by: | [] |
Total mark: | 5 |
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