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Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructures
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | Optoelectronics and Advances Materials-Rapid Communications |
| Volume: | 3 |
| Year: | 2009 |
| Pages: | 904-909 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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