High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration
Type of publication: | Article |
Citation: | |
Publication status: | Accepted |
Journal: | IEEE Electron Device Letters |
Volume: | 30 |
Year: | 2009 |
Pages: | 1161-1163 |
DOI: | 10.1109/LED.2009.2030905 |
Keywords: | |
Authors | |
Added by: | [] |
Total mark: | 5 |
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