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First name(s): |
M. |
Last name(s): |
Gokkavas |
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Gundogdu, T.F., Guven, K., Gokkavas, M., Soukoulis, C.M. and Ozbay, E., A Planar Metamaterial with Dual-Band Double-Negative Response at EHF (2011), in: IEEE J of Selected Topics in Quantum Electronics, 16(376-379)
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Gundogdu, T.F., Guven, K., Gokkavas, M., Soukoulis, C.M. and Ozbay, E., A Planar Metamaterial with Dual-Band Double-Negative Response at EHF (2010), in: IEEE J of Selected Topics in Quantum Electronics, 16(376-379)
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[DOI]
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Gokkavas, M., Butun, S., Tut, T., Biyikli, N. and Ozbay, E., AlGaN-based high-performance metal-semiconductor-metal photodetectors (2008), in: Photonics and Nanostructures, 5(53-62)
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Gokkavas, M., Butun, S., Tut, T., Biyikli, N. and Ozbay, E., AlGaN-based high-performance metal-semiconductor-metal photodetectors (2008), in: Photonics and Nanostructures, 5(53-62)
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Gundogdu, T.F., Gokkavas, M., Guven, K., Kafesaki, M., Soukoulis, C.M. and Ozbay, E., Simulation and micro-fabrication of optically switchable split ring resonators (2008), in: Photonics and Nanostructures, 5(106-112)
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Gundogdu, T.F., Gokkavas, M., Guven, K., Kafesaki, M., Soukoulis, C.M. and Ozbay, E., Simulation and micro-fabrication of optically switchable split ring resonators (2008), in: Photonics and Nanostructures, 5(106-112)
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Butun, S., Tut, T., Butun, B., Gokkavas, M., Yu, H. and Ozbay, E., Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2007), in: Applied Physics Letters, 88(123503-1--2)
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Gokkavas, M., Butun, S., Yu, H., Tut, T., Butun, B. and Ozbay, E., Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors (2007), in: Applied Physics Letters, 89(143503-1--3)
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Gokkavas, M., Guven, K., Bulu, I., Aydin, K., Penciu, R.S., Kafesaki, M., Soukoulis, C.M. and Ozbay, E., Experimental demonstration of a left-handed metamaterial operating at 100 GHz (2007), in: Physical Review B, 73(193103-1--4)
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Gokkavas, M., Guven, K., Bulu, I., Aydin, K., Penciu, R.S., Kafesaki, M., Soukoulis, C.M. and Ozbay, E., Experimental demonstration of a left-handed metamaterial operating at 100 GHz (2007), in: Physical Review B, 73(193103-1--4)
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Tut, T, Gokkavas, M., Butun, B., Butun, S., Ulker, E. and Ozbay, E., Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes (2007), in: Applied Physics Letters, 89(183524-1--3)
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Butun, S., Tut, T., Butun, B., Gokkavas, M., Yu, H. and Ozbay, E., Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2006), in: Applied Physics Letters, 88(123503-1--2)
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[DOI]
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Gokkavas, M., Butun, S., Yu, H., Tut, T., Butun, B. and Ozbay, E., Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors (2006), in: Applied Physics Letters, 89(143503-1--3)
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[DOI]
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Tut, T, Gokkavas, M., Butun, B., Butun, S., Ulker, E. and Ozbay, E., Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes (2006), in: Applied Physics Letters, 89(183524-1--3)
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[DOI]
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Tut, T., Butun, S., Butun, B., Gokkavas, M., Yu, H.B. and Ozbay, E., Solar-blind AlxGa1-xN-based avalanche photodiodes (2005), in: Applied Physics Letters, 87(223502)
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[DOI]
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Tut, T., Butun, S., Butun, B., Gokkavas, M., Yu, H.B. and Ozbay, E., Solar-blind AlxGa1-xN-based avalanche photodiodes (2005), in: Applied Physics Letters, 87(223502)
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[DOI]
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Biyikli, N., Kimukin, I., Aytur, O., Gokkavas, M., Unlu, M.S. and Ozbay, E., 45-GHz Bandwidth Efficiency Resonant Cavity Enhanced ITO-Schottky Photodiodes (2001), in: IEEE Photonics Technology Letters, 13(705)
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[DOI]
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Biyikli, N., Kimukin, I., Aytur, O., Gokkavas, M., Unlu, M.S. and Ozbay, E., 45-GHz bandwidth-effiency resonant-cavity-enhanced ITO-Schottky photodiodes (2001), in: IEEE Photonics Technology Letters, 13(705-707)
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[DOI]
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Biyikli, N., Kimukin, I., Aytur, O., Gokkavas, M., Unlu, M.S. and Ozbay, E., High speed visible blind GaN-based indium tin oxide Schottky photodiodes (2001), in: Applied Physics Letters, 79(2838)
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[DOI]
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Gokkavas, M., Dostunmu, O., Unlu, M.S., Ulu, G., Mirin, R.P., Christensen, D.H. and Ozbay, E., High-Speed High Effiency Large Area Resonant Cavity Enhanced p-I-n Photodiodes for Multimode Fiber Communications (2001), in: IEEE Photonics Technology Letters, 13(1205)
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[DOI]
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Ozbay, E., Kimukin, I., Biyikli, N., Aytur, O., Gokkavas, M., Ulu, G., Unlu, M.S., Mirin, R., Bertness, K.A. and Christensen, D.H., High speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in 795-835 nm range (2000), in: Applied Physics Letters, 74(1074-1074)
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Gokkavas, M., Onat, B.M., Ozbay, E., Ata, E.P., Xu, J, Towe, E. and Unlu, M.S., Design and Optimization of High-Speed Resonant Cavity Enhanced Schottky Photodiodes (1999), in: IEEE Journal of Quantum Electronics, 35(208-215)
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[DOI]
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Ozbay, E., Kimukin, I., Biyikli, N., Aytur, O., Gokkavas, M., Ulu, G., Unlu, M.S., Mirin, R., Bertness, K.A. and Christensen, D.H., High speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in 795-835 nm range (1999), in: Applied Physics Letters, 74(1072-1074)
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[DOI]
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Onat, B., Gokkavas, M., Ozbay, E., Ata, E.P., Towe, E. and Unlu, M.S., 100 GHz resonant cavity enhanced Schottky photodiodes (1998), in: IEEE Photonics Technology Letters, 10(707-709)
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[DOI]
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Ozbay, E., Islam, M.S., Onat, B., Gokkavas, M., Aytur, O., Tuttle, G, Towe, E., Henderson, R.H. and Unlu, M.S., Fabrication of high-speed resonant cavity enhanced schottky photodiodes (1998), in: IEEE Photonics Technology Letters, 9(672-674)
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Unlu, M.S., Gokkavas, M., Onat, B.M., Ata, E.P., Ozbay, E., Mirin, R.P., Knopp, K.J., Bertness, K.A. and Christensen, D.H., High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation (1998), in: Applied Physics Letters, 72(2727-2729)
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[DOI]
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Ozbay, E., Islam, M.S., Onat, B., Gokkavas, M., Aytur, O., Tuttle, G, Towe, E., Henderson, R.H. and Unlu, M.S., Fabrication of high-speed resonant cavity enhanced schottky photodiodes (1997), in: IEEE Photonics Technology Letters, 9(672-674)
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[DOI]
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