Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | Semicond. Sci. Technol. |
| Volume: | 25 |
| Year: | 2010 |
| Pages: | 045024-1--7 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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