Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | J of Electronic Materials |
| Volume: | 39 |
| Year: | 2010 |
| Pages: | 2681-2686 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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