Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | Physica Status Solidi A |
| Volume: | 207 |
| Year: | 2010 |
| Pages: | 2593-2596 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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