Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer
Type of publication: | Article |
Citation: | |
Publication status: | Accepted |
Journal: | Physica Status Solidi A |
Volume: | 207 |
Year: | 2010 |
Pages: | 2593-2596 |
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Authors | |
Added by: | [] |
Total mark: | 5 |
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