Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements
Type of publication: | Article |
Citation: | |
Publication status: | Accepted |
Journal: | Semicond. Sci. Technol. |
Volume: | 23 |
Year: | 2008 |
Pages: | 095008-1--7 |
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Authors | |
Added by: | [] |
Total mark: | 5 |
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