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Publications of Kasap, M.
2011
| , , , , and , Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599) |
| , , , , and , Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599) |
| , , , and , Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841) |
| , , , and , Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , and , Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563) |
| , , , , and , Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563) |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2011), in: J Applied Physics, 108(013712-1--7) |
2010
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2010), in: J Applied Physics, 105(093701-1--6) |
| , , , and , Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) (2010), in: J of Optoelectronics and Advanced Materials, 11(578-582) |
| , , , and , Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) (2010), in: J of Optoelectronics and Advanced Materials, 11(578-582) |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2010), in: J Applied Physics, 108(013712-1--7) |
[DOI] |
2009
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2009), in: J Applied Physics, 105(093701-1--6) |
[DOI] |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7) |
2008
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7) |
[DOI] |
2007
| , , , , and , Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3) |
[DOI] |
| , , , , and , Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3) |
[DOI] |