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Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | J of Optoelectronics and Advanced Materials |
| Volume: | 11 |
| Year: | 2009 |
| Pages: | 578-582 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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