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P. |
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Tasli |
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| Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B. and Ozcelik, S., Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599)
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| Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B. and Ozcelik, S., Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599)
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| Yildiz, A., Lisesivdin, S.B., Tasli, P., Ozbay, E. and Kasap, M., Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841)
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| Yildiz, A., Lisesivdin, S.B., Tasli, P., Ozbay, E. and Kasap, M., Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841)
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| Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)
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| Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)
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| Tasli, P., Lisesivdin, S.B., Yildiz, A., Kassap, M., Arslan, E., Ozcelik, S. and Ozbay, E., Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139)
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| Tasli, P., Lisesivdin, S.B., Yildiz, A., Kassap, M., Arslan, E., Ozcelik, S. and Ozbay, E., Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139)
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