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R. |
| Last name(s): |
Tulek |
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| Teke, A., Gokden, S., Tulek, R., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12)
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| Teke, A., Gokden, S., Tulek, R., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12)
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| Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)
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| Gokden, S., Tulek, R., Teke, A., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7)
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| Gokden, S., Tulek, R., Teke, A., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7)
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| Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)
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