Gasanly, N.M. - A Web Based Annotated Bibliography - Aigaion 2.0

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First name(s):	N.M.
Last name(s):	Gasanly

Aydinli, A. and Gasanly, N.M., Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors (2004), in: Defect and Diffusion Forum, 210(61-69)

Aydinli, A., Gasanly, N.M., Uka, A. and Efeoglu, H., Anharmonicity in Ga Te Layered Crystals (2003), in: Crystal Research Technology, 37(1303-1309)

Aydinli, A., Gasanly, N.M. and Goksen, K., Low Temperature Photoluminescence Study of GaSe0,5S0,5 Layered Crystals (2002), in: Materials Research Bulletin, 36(1823-1832)

Aydinli, A., Gasanly, N.M. and Aytekin, S., Trap levels in layered semiconductor Ga2SeS (2005), in: Solid State Communications, 132(857-561)

Aydinli, A., Ellialtioglu, R., Allakhverdiev, K.R., Ellialtioglu, S. and Gasanly, N.M., Low Temperature Phase Transitions in TlGaS2 layer crystals (1994), in: Solid State Communications, 88(387-390)

Aydinli, A., Ellialtioglu, R., Allakhverdiev, K.R., Ellialtioglu, S. and Gasanly, N.M., Low Temperature Phase Transitions in TlGaS₂ layer crystals (1994), in: Solid State Communications, 88(387-390)

Aydinli, A, Gasanly, N.M., Yilmaz, I. and Serpenguzel, A., Radiative donor-acceptor pair recombination in TlInS₂ single crystals (2000), in: Semicond. Sci. Technol., 14(599-603)

Aydinli, A, Gasanly, N.M., Yilmaz, I. and Serpenguzel, A., Radiative donor-acceptor pair recombination in TlInS2 single crystals (2000), in: Semicond. Sci. Technol., 14(599-603)

Aydinli, A., Gasanly, N.M. and Goksen, K., Donor-acceptor pair recombination in gallium sulfide (2000), in: J Applied Physics, 88

[DOI]

Gasanly, N.M., Serpenguzel, A., Aydinli, A., Gurlu, O. and Yilmaz, I., Donor-acceptor pair recombination in AgIn₅S₈ single crystals (1999), in: J Applied Physics, 85(3198-3201)

[DOI]

Goksen, K., Gasanly, N.M., Ozkan, H. and Aydinli, A., Donor-acceptor pair recombination in tl2InGaS4 layered crystals (2007), in: J of Korean Phys. Soc., 47(267-271)

Allakhverdiev, K.R., Gasanly, N.M. and Aydinli, A., Low Temperature Photoluminescence Spectra of TlIn_xGa_1-xS₂ layer mixed crystals (1996), in: Solid State Communications, 94(777-782)

Gasanly, N.M. and Aydinli, A., Low-temperature Raman scattering Spectra of GaSexS1-x Layered Mixed Crystal (2003), in: Crystal Research Technology, 37(1011-1017)

Gasanly, N.M. and Aydinli, A., Low temperature photoluminescence spectra of InS single crystals (1997), in: Solid State Communications, 101(797-799)

Gasanly, N.M., Aydinli, A., Bek, A. and Yilmaz, I., Low temperature photoluminescence spectra of layered semiconductor TlGaS2 (1999), in: Solid State Communications, 105(21-24)

Gasanly, N.M., Aydinli, A., Kocabas, C. and Ozkan, H., Anharmonity of zone-center optical phonons: Raman scattering spectra of GaSe0,5S0,5 layered crystal (2002), in: Physica Scripta, 65(534-538)

Gasanly, N.M., Aydinli, A., Ozkan, H. and Kocabas, C., Temperature Dependent Raman Scattering Spectra of e-GaSe Layered Crystal (2002), in: Materials Research Bulletin, 37(169-176)

Gasanly, N.M., Aydinli, A., Ozkan, H. and Kocabas, C., Temperature dependence of the first-order Raman scattering in GaS layered crystals (2001), in: Solid State Communications, 116(147-151)

Gasanly, N.M., Aydinli, A. and Yuksek, N.S., Temperature and Excitation Intensity-dependent Photoluminescence in T1InSeS Single Crystal's (2003), in: J of Physics Condensed Matter, 14(13685-13692)

Gasanly, N.M., Aydinli, A. and Yuksek, N.S., Thermally Stimulated Currents in n-InS Single Crystals (2003), in: Materials Research Bulletin, 38(699-704)

Gasanly, N.M., Aydinli, A., Yuksek, N.S. and Salihoglu, O., Trapping Centers in Undoped GaS Layered Single Crystals (2003), in: Applied Physics A Materials Science & Processing, 76(1-4)

Gasanly, N.M., Aydinli, A. and Salihoglu, O., Thermally Stimulated Current Observation of Trapping Centers in undoped GaSe layered Single Crystals (2002), in: Crystal Research Technology, 36(295-301)

Gasanly, N.M., Serpenguzel, A., Aydinli, A., Gurlu, O. and Yilmaz, I., Donor-acceptor pair recombination in AgInS single crystals (2000), in: J Applied Physics, 85(3198-3201)

Gasanly, N.M., Serpenguzel, A., Aydinli, A. and Baten, S.M.A., Low temperature visible photoluminescence spectra of TlGaSe₂ layered crystal (2000), in: J of Luminescence, 86(39-43)

Gasanly, N.M., Serpenguzel, A., Gurlu, ?, Aydinli, A. and Yilmaz, ?, Dependence of the photoluminescence .. (1999), in: Solid State Communications, 108(525-530)

Gasanly, N.M., Serpenguzel, A., Gurlu, O., Aydinli, A. and Yilmaz, I., Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity (1999), in: Solid State Communications, 108(525-530)

Gasanly, N.M., Ozkan, H., Aydinli, A. and Yilmaz, I., Temperature dependence of the Raman-active phonon frequencies in indium sulfide (2000), in: Solid State Communications, 110(232-236)

Yuksek, N.S., Gasanly, N.M. and Aydinli, A., Anharmonic line shift ad linewidth of the Raman modes in T1InS2 layered crystals (2004), in: J of Raman Spectroscopy, 35(55-60)

Yuksek, N.S., Gasanly, N.M., Aydinli, A., Ozkan, H. and Acikgoz, M., Infrared Photoluminesce from TlGaS2 layered single crytals (2005), in: Crystal Research Technology, 39(800-806)

Yuksek, N.S., Gasanly, N.M., Ozkan, H. and Aydinli, A., Temperature Dependence of Raman-active Modes of TlGaS2 Layered Crystals: An Anharmonicity Study (2005), in: J of Korean Phys. Soc., 45(501-506)

Aytekin, S., Yuksek, N.S., Goktepe, M., Gasanly, N.M. and Aydinli, A., Thermally Stimulated Currents in Layered Ga4SeS3 semiconductor (2005), in: Physica Status Solidi A(1-6)

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