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Publications of Gasanly, N.M. sorted by journal
A
| , , and , Trapping Centers in Undoped GaS Layered Single Crystals (2003), in: Applied Physics A Materials Science & Processing, 76(1-4) |
C
| , and , Thermally Stimulated Current Observation of Trapping Centers in undoped GaSe layered Single Crystals (2002), in: Crystal Research Technology, 36(295-301) |
| and , Low-temperature Raman scattering Spectra of GaSexS1-x Layered Mixed Crystal (2003), in: Crystal Research Technology, 37(1011-1017) |
| , , and , Anharmonicity in Ga Te Layered Crystals (2003), in: Crystal Research Technology, 37(1303-1309) |
| , , , and , Infrared Photoluminesce from TlGaS2 layered single crytals (2005), in: Crystal Research Technology, 39(800-806) |
D
| and , Defect Luminescence in Some Layered Binary Chalcogenide Semiconductors (2004), in: Defect and Diffusion Forum, 210(61-69) |
J
| , and , Donor-acceptor pair recombination in gallium sulfide (2000), in: J Applied Physics, 88 |
[DOI] |
| , , , and , Donor-acceptor pair recombination in AgIn5S8 single crystals (1999), in: J Applied Physics, 85(3198-3201) |
[DOI] |
| , , , and , Donor-acceptor pair recombination in AgInS single crystals (2000), in: J Applied Physics, 85(3198-3201) |
| , , and , Donor-acceptor pair recombination in tl2InGaS4 layered crystals (2007), in: J of Korean Phys. Soc., 47(267-271) |
| , , and , Temperature Dependence of Raman-active Modes of TlGaS2 Layered Crystals: An Anharmonicity Study (2005), in: J of Korean Phys. Soc., 45(501-506) |
| , , and , Low temperature visible photoluminescence spectra of TlGaSe2 layered crystal (2000), in: J of Luminescence, 86(39-43) |
| , and , Temperature and Excitation Intensity-dependent Photoluminescence in T1InSeS Single Crystal's (2003), in: J of Physics Condensed Matter, 14(13685-13692) |
| , and , Anharmonic line shift ad linewidth of the Raman modes in T1InS2 layered crystals (2004), in: J of Raman Spectroscopy, 35(55-60) |
M
| , and , Low Temperature Photoluminescence Study of GaSe0,5S0,5 Layered Crystals (2002), in: Materials Research Bulletin, 36(1823-1832) |
| , , and , Temperature Dependent Raman Scattering Spectra of e-GaSe Layered Crystal (2002), in: Materials Research Bulletin, 37(169-176) |
| , and , Thermally Stimulated Currents in n-InS Single Crystals (2003), in: Materials Research Bulletin, 38(699-704) |
P
| , , and , Anharmonity of zone-center optical phonons: Raman scattering spectra of GaSe0,5S0,5 layered crystal (2002), in: Physica Scripta, 65(534-538) |
| , , , and , Thermally Stimulated Currents in Layered Ga4SeS3 semiconductor (2005), in: Physica Status Solidi A(1-6) |
S
| , , and , Radiative donor-acceptor pair recombination in TlInS2 single crystals (2000), in: Semicond. Sci. Technol., 14(599-603) |
| , , and , Radiative donor-acceptor pair recombination in TlInS2 single crystals (2000), in: Semicond. Sci. Technol., 14(599-603) |
| , , and , Temperature dependence of the first-order Raman scattering in GaS layered crystals (2001), in: Solid State Communications, 116(147-151) |
| , , , and , Low Temperature Phase Transitions in TlGaS2 layer crystals (1994), in: Solid State Communications, 88(387-390) |
| , , , and , Low Temperature Phase Transitions in TlGaS2 layer crystals (1994), in: Solid State Communications, 88(387-390) |
| , and , Low Temperature Photoluminescence Spectra of TlInxGa1-xS2 layer mixed crystals (1996), in: Solid State Communications, 94(777-782) |
| and , Low temperature photoluminescence spectra of InS single crystals (1997), in: Solid State Communications, 101(797-799) |
| , , and , Low temperature photoluminescence spectra of layered semiconductor TlGaS2 (1999), in: Solid State Communications, 105(21-24) |
| , , , and , Dependence of the photoluminescence .. (1999), in: Solid State Communications, 108(525-530) |
| , , , and , Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity (1999), in: Solid State Communications, 108(525-530) |
| , , and , Temperature dependence of the Raman-active phonon frequencies in indium sulfide (2000), in: Solid State Communications, 110(232-236) |
| , and , Trap levels in layered semiconductor Ga2SeS (2005), in: Solid State Communications, 132(857-561) |