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High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | Applied Physics Letters |
| Volume: | 97 |
| Year: | 2010 |
| Pages: | 063503-1--3 |
| DOI: | 10.1063/1.3478242 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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