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S. |
| Last name(s): |
Ozcelik |
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| Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137)
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| Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137)
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| Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7)
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[DOI]
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| Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3)
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[DOI]
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| Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3)
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[DOI]
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| Corekci, S., Ozturk, M.K., Akaoglu, B., Cakmak, M., Ozcelik, S. and Ozbay, E., Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2007), in: J Applied Physics, 101(123502)
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[DOI]
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| Tekeli, Z., Altindal, S., Cakmak, M., Ozcelik, S., Caliskan, D. and Ozbay, E., The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8)
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[DOI]
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| Tekeli, Z., Altindal, S., Cakmak, M., Ozcelik, S., Caliskan, D. and Ozbay, E., The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8)
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[DOI]
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