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Publications of Ozcelik, S. sorted by journal
A
| , , , , and , Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563) |
| , , , , and , Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3) |
[DOI] |
| , , , , and , Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3) |
[DOI] |
| , and , Superradiant lasing form J-aggregated molecules adsorbed onto colloidal silver (1998), in: Applied Physics Letters, 14(1949-1951) |
[DOI] |
C
| , , , , , and , Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139) |
| , , , , , and , Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
J
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2007), in: J Applied Physics, 101(123502) |
[DOI] |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2008), in: J Applied Physics, 101(123502) |
| , , , , and , The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8) |
[DOI] |
| , , and , Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2009), in: J Applied Physics, 105(023705-1--7) |
[DOI] |
| , , and , Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2010), in: J Applied Physics, 105(023705-1--7) |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2009), in: J Applied Physics, 105(093701-1--6) |
[DOI] |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2010), in: J Applied Physics, 105(093701-1--6) |
| , , , , and , The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8) |
[DOI] |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7) |
[DOI] |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7) |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2010), in: J Applied Physics, 108(013712-1--7) |
[DOI] |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2011), in: J Applied Physics, 108(013712-1--7) |
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| and , Optical transition rates of a meso-substituted thiacarbocyanine in methanol-in-oil reverse miscelles (2007), in: J of Luminescence, 113(1-8) |
| , Stready State and Picosecond Time Resolved Photophysics of a Benzimidazolocarbocyanine (2002), in: J of Luminescence, 96(141-148) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| and , Superradiance of aggregated thiacarbocyanine molecules (2000), in: J of Physical Chemistry, 103(8926-8929) |
| , and , Probing nanoscale domains of J-aggregates deposited on a mica surface (2006), in: J of Physical Chemistry B, 108(4679-4683) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
M
| , , , , , and , Effects of thermal annealing on the morphology of the AlxGa(1-x)N films (2011), in: Materials Science in Semiconductor Processing, 12(238-242) |
| , , , , , and , Effects of thermal annealing on the morphology of the AlxGa(1-x)N films (2011), in: Materials Science in Semiconductor Processing, 12(238-242) |
| , , , and , The Profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2009), in: Microelectronic Engineering, 85(2316-2321) |
| , , , and , The Profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2009), in: Microelectronic Engineering, 85(2316-2321) |
P
| , , , , and , Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599) |
| , , , , and , Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
S
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |