Publications of Butun, S. sorted by title
A
| , , , and , AlGaN-based high-performance metal-semiconductor-metal photodetectors (2008), in: Photonics and Nanostructures, 5(53-62) |
| , , , and , AlGaN-based high-performance metal-semiconductor-metal photodetectors (2008), in: Photonics and Nanostructures, 5(53-62) |
D
| , , , , and , Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2007), in: Applied Physics Letters, 88(123503-1--2) |
| , , , , and , Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2006), in: Applied Physics Letters, 88(123503-1--2) |
[DOI] |
| , , , , and , Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors (2006), in: Applied Physics Letters, 89(143503-1--3) |
[DOI] |
| , , , , and , Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors (2007), in: Applied Physics Letters, 89(143503-1--3) |
E
| , , , , and , Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes (2006), in: Applied Physics Letters, 89(183524-1--3) |
[DOI] |
| , , , , and , Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes (2007), in: Applied Physics Letters, 89(183524-1--3) |
I
| , , and , Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis (2011), in: J of Electronic Materials, 39(2681-2686) |
| , , and , Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis (2011), in: J of Electronic Materials, 39(2681-2686) |
L
| , and , Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83ln0.17N/AIN/GaN heterostructures (2010), in: Applied Physics Letters, 94(142106-1--3) |
| , and , Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83ln0.17N/AIN/GaN heterostructures (2009), in: Applied Physics Letters, 94(142106-1--3) |
[DOI] |
| , , and , Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN (2006), in: Applied Physics Letters, 89(073503-1--3) |
[DOI] |
| , , and , Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN (2007), in: Applied Physics Letters, 89(073503-1--3) |
M
| , , and , Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition (2007), in: Physica Status Solidi A, 203(868-873) |
| , , and , Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition (2007), in: Physica Status Solidi A, 203(868-873) |
S
| , , , , and , Solar-blind AlxGa1-xN-based avalanche photodiodes (2005), in: Applied Physics Letters, 87(223502) |
[DOI] |
| , , , , and , Solar-blind AlxGa1-xN-based avalanche photodiodes (2005), in: Applied Physics Letters, 87(223502) |
[DOI] |
T
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7) |
[DOI] |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7) |