Publications of Yu, H. sorted by journal
A
| , , , , and , Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2006), in: Applied Physics Letters, 88(123503-1--2) |
[DOI] |
| , , , , and , Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2007), in: Applied Physics Letters, 88(123503-1--2) |
| , , and , Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN (2006), in: Applied Physics Letters, 89(073503-1--3) |
[DOI] |
| , , and , Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN (2007), in: Applied Physics Letters, 89(073503-1--3) |
| , , , , and , Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors (2006), in: Applied Physics Letters, 89(143503-1--3) |
[DOI] |
| , , , , and , Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors (2007), in: Applied Physics Letters, 89(143503-1--3) |
J
| , and , Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications (2006), in: J Applied Physics, 100(033501-1--4) |
[DOI] |
| , and , Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications (2007), in: J Applied Physics, 100(033501-1--4) |
| , and , MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35 (2007), in: J of Crystal Growth, 289(419-422) |
| , and , MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35 (2007), in: J of Crystal Growth, 289(419-422) |
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , , and , MOCVD growth and optical properties of non-polar (1 1-2 0) a-plane GaN on (1 0-1 2) r-plane sapphire substrate (2011), in: J of Crystal Growth, 312(3438-3442) |
| , , , and , MOCVD growth and optical properties of non-polar (1 1-2 0) a-plane GaN on (1 0-1 2) r-plane sapphire substrate (2011), in: J of Crystal Growth, 312(3438-3442) |
| , , and , Low damage etching of GaN surfaces via bias assisted PEC oxidation in deionized water (2007), in: J of Electronic Materials, 36(629-633) |
| , , and , Low damage etching of GaN surfaces via bias assisted PEC oxidation in deionized water (2007), in: J of Electronic Materials, 36(629-633) |
| , , and , Low damage etching of GaN surfaces via bias assisted PEC oxidation in deionized water (2007), in: J of Electronic Materials, 36(629-633) |
P
| , , and , Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition (2007), in: Physica Status Solidi A, 203(868-873) |
| , , and , Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition (2007), in: Physica Status Solidi A, 203(868-873) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
S
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |