Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier
| Type of publication: | Article |
| Citation: | |
| Publication status: | Accepted |
| Journal: | Thin Solid Films |
| Volume: | 518 |
| Year: | 2010 |
| Pages: | 5572-5575 |
| Keywords: | |
| Authors | |
| Added by: | [] |
| Total mark: | 5 |
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