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Publications of Ozbay, E. sorted by journal
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| , , and , Generation of an Axially Asymmetric Bessel-Like Beam from a Metallic Subwavelength Aperture (2010), in: Physical Review Letters, 102(143901-1--4) |
| , , and , Generation of an Axially Asymmetric Bessel-Like Beam from a Metallic Subwavelength Aperture (2010), in: Physical Review Letters, 102(143901-1--4) |
| , and , Tight-binding description of the coupled defect modes in three-dimensional photonic crystals (2001), in: Physical Review Letters, 84(2140-2143) |
| , , , and , Subwavelength resolution in a two-dimensional photonic crystal based superlens (2004), in: Physical Review Letters, 91(2140-1--2140-4) |
| , , , , , and , Split-Ring-Resonator-Coupled Enhanced Transmission through a Single Subwavelength Aperture (2009), in: Physical Review Letters, 102(013904-1--4) |
| , , , , , and , Split-Ring-Resonator-Coupled Enhanced Transmission through a Single Subwavelength Aperture (2009), in: Physical Review Letters, 102(013904-1--4) |
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| , Plasmonics: Merging photonics and electronics at nanoscale dimensions (2007), in: Science, 311(189-193) |
| , Plasmonics: Merging photonics and electronics at nanoscale dimensions (2007), in: Science, 311(189-193) |
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , , and , High-speed characterization of solar-blind AlxGa1-xN p-I-n photodiodes (2005), in: Semicond. Sci. Technol., 19(1259-1262) |
| , , , , and , High-speed characterization of solar-blind AlxGa1-xN p-I-n photodiodes (2005), in: Semicond. Sci. Technol., 19(1259-1262) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , and , Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6) |
| , , and , Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6) |
| , , , , , , , , and , Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7) |
| , , , , , , , , and , Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7) |
| , , , , , and , High bandwidth-effiency solar-blind A1GaN Schottky photodiodes with low dark current (2005), in: Solid State Electronics, 49(117-122) |
| , , , , , and , High bandwidth-efficiency solar-blind A1GaN Schottky photodiodes with low dark current (2005), in: Solid State Electronics, 49(117-122) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
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| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
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