Dear guest, welcome to this publication database. As an anonymous user, you will probably not have edit rights. Also, the collapse status of the topic tree will not be persistent. If you like to have these and other options enabled, you might ask Admin for a login account.
| This site is powered by Aigaion - A PHP/Web based management system for shared and annotated bibliographies. For more information visit www.aigaion.nl. |
|
Publications of Ozbay, E. sorted by title
‹ First Page | 1-50 | 51-100 | 101-150 | 151-200 | 201-250 | 251-300 | 301-350 | 351-400 | 401-430 | Last Page ›
S
| , , , and , Spectral negative refraction and focusing analysis of a two-dimensional left-handed photonic crystal lens (2005), in: Physical Review B, 70(205125-1--5) |
| , , , , , and , Split-Ring-Resonator-Coupled Enhanced Transmission through a Single Subwavelength Aperture (2009), in: Physical Review Letters, 102(013904-1--4) |
| , , , , , and , Split-Ring-Resonator-Coupled Enhanced Transmission through a Single Subwavelength Aperture (2009), in: Physical Review Letters, 102(013904-1--4) |
| , , and , Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity (2002), in: Applied Physics A Materials Science & Processing, 73(125-127) |
| , , and , Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures (2002), in: Applied Physics A Materials Science & Processing, 73(125-127) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2007), in: J Applied Physics, 101(123502) |
[DOI] |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2008), in: J Applied Physics, 101(123502) |
| , , and , Study of the field emitted by a source placed inside a two-dimensional left-handed metamaterial (2007), in: Optics Letters, 32(850-852) |
[DOI] |
| , , and , Study of the field emitted by a source placed inside a two-dimensional left-handed metamaterial (2008), in: Optics Letters, 32(850-852) |
| , , , and , Subwavelength resolution in a two-dimensional photonic crystal based superlens (2004), in: Physical Review Letters, 91(2140-1--2140-4) |
| , and , Subwavelength resolution with a negative-index metamaterial superlens (2007), in: Applied Physics Letters, 90(254102-1--3) |
[DOI] |
| , and , Subwavelength resolution with a negative-index metamaterial superlens (2008), in: Applied Physics Letters, 90(254102-1--3) |
| , and , Super-resolution imaging by one-dimensional, microwave left-handed metamaterials with an effective negative index (2009), in: J of Physics Condensed Matter, 20(304216-1--7) |
| , and , Super-resolution imaging by one-dimensional, microwave left-handed metamaterials with an effective negative index (2009), in: J of Physics Condensed Matter, 20(304216-1--7) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| and , Surface wave splitter based on metallic gratings with sub-wavelength aperture (2008), in: Optics Express, 16(19091-19096) |
[DOI] |
| and , Surface wave splitter based on metallic gratings with sub-wavelength aperture (2009), in: Optics Express, 16(19091-19096) |
| , , , , , , , and , Synthesis and Characterization of Iron Oxide Derivatized Mutant Cowpea Mosaic Virus Hybrid Nanoparticles (2009), in: Advanced Materials, 20(1-5) |
| , , , , , , , and , Synthesis and Characterization of Iron Oxide Derivatized Mutant Cowpea Mosaic Virus Hybrid Nanoparticles (2009), in: Advanced Materials, 20(1-5) |
T
| , , , and , Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AýN/GaN heterostructures (2011), in: J of Non-crystalline Solids, 356(1006-1011) |
| , , , and , Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AýN/GaN heterostructures (2011), in: J of Non-crystalline Solids, 356(1006-1011) |
| , , , , and , The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8) |
[DOI] |
| , , , , and , The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8) |
[DOI] |
| , , , , , , , , and , The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12) |
| , , , , , , , , and , The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , and , The focusing effect of graded index photonic crystals (2008), in: Applied Physics Letters, 93(171108-1--3) |
[DOI] |
| , , , and , The focusing effect of graded index photonic crystals (2009), in: Applied Physics Letters, 93(171108-1--3) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , , , and , The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates (2009), in: J of Crystal Growth, 310(4876-4879) |
| , , , , , , and , The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates (2009), in: J of Crystal Growth, 310(4876-4879) |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7) |
[DOI] |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7) |
| , , , and , The Profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2009), in: Microelectronic Engineering, 85(2316-2321) |
| , , , and , The Profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2009), in: Microelectronic Engineering, 85(2316-2321) |
| and , Theoretical Study and Experimental Realization of a Low-Loss Metamaterial Operating at the Millimeter-Wave Regime: Demonstrations of Flat- and Prism-Shaped Samples (2010), in: IEEE J of Selected Topics in Quantum Electronics, 16(386-393) |
[DOI] |
| and , Theoretical Study and Experimental Realization of a Low-Loss Metamaterial Operating at the Millimeter-Wave Regime: Demonstrations of Flat- and Prism-Shaped Samples (2011), in: IEEE J of Selected Topics in Quantum Electronics, 16(386-393) |
| , and , Tight-binding description of the coupled defect modes in three-dimensional photonic crystals (2001), in: Physical Review Letters, 84(2140-2143) |
| , and , Toward photonic crystal based spatial filters with wide angle ranges of total transmission (2009), in: Applied Physics Letters, 94(181101-1--3) |
[DOI] |
‹ First Page | 1-50 | 51-100 | 101-150 | 151-200 | 201-250 | 251-300 | 301-350 | 351-400 | 401-430 | Last Page ›