Teke, A. - A Web Based Annotated Bibliography - Aigaion 2.0

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First name(s):	A.
Last name(s):	Teke

Teke, A., Gokden, S., Tulek, R., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12)

Teke, A., Gokden, S., Tulek, R., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12)

Arslan, E., Ozturk, M.K., Teke, A., Ozcelik, S. and Ozbay, E., Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10)

Arslan, E., Ozturk, M.K., Teke, A., Ozcelik, S. and Ozbay, E., Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10)

Arslan, E., Duygulu, O., Kaya, A.A., Teke, A., Ozcelik, S. and Ozbay, E., The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN_x interlayers (2010), in: Superlattices and Microstructures, 46(846-857)

Arslan, E., Duygulu, O., Kaya, A.A., Teke, A., Ozcelik, S. and Ozbay, E., The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN_x interlayers (2010), in: Superlattices and Microstructures, 46(846-857)

Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)

Gokden, S., Tulek, R., Teke, A., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7)

Gokden, S., Tulek, R., Teke, A., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7)

Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)

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