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Publications of Teke, A. sorted by title
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| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
C
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
M
| , , , , , , , , and , Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7) |
| , , , , , , , , and , Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7) |
T
| , , , , , , , , and , The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12) |
| , , , , , , , , and , The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |