Dear guest, welcome to this publication database. As an anonymous user, you will probably not have edit rights. Also, the collapse status of the topic tree will not be persistent. If you like to have these and other options enabled, you might ask Admin for a login account.
| This site is powered by Aigaion - A PHP/Web based management system for shared and annotated bibliographies. For more information visit www.aigaion.nl. |
|
Publications of Arslan, E. sorted by journal
A
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , and , Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83ln0.17N/AIN/GaN heterostructures (2009), in: Applied Physics Letters, 94(142106-1--3) |
[DOI] |
| , and , Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al0.83ln0.17N/AIN/GaN heterostructures (2010), in: Applied Physics Letters, 94(142106-1--3) |
C
| , , , , , and , Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139) |
| , , , , , and , Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
J
| , , and , Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2009), in: J Applied Physics, 105(023705-1--7) |
[DOI] |
| , , and , Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2010), in: J Applied Physics, 105(023705-1--7) |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7) |
[DOI] |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7) |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
| , , and , Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis (2011), in: J of Electronic Materials, 39(2681-2686) |
| , , and , Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis (2011), in: J of Electronic Materials, 39(2681-2686) |
| , , , and , Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AýN/GaN heterostructures (2011), in: J of Non-crystalline Solids, 356(1006-1011) |
| , , , and , Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AýN/GaN heterostructures (2011), in: J of Non-crystalline Solids, 356(1006-1011) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
M
| , , , and , Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AIN/GaN heterostructures (2011), in: Microelectronic Engineering, 87(1997-2001) |
| , , , and , Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AIN/GaN heterostructures (2011), in: Microelectronic Engineering, 87(1997-2001) |
S
| , , and , Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6) |
| , , and , Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
T
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |