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Publications of Ozbay, E. sorted by first author
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| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , and , Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN (2007), in: Applied Physics Letters, 89(073503-1--3) |
| , , , , and , Deep-ultraviolet Al0.75Ga0.25N photodiodes with low cutoff wavelength (2007), in: Applied Physics Letters, 88(123503-1--2) |
| , , and , One-way transmission through the subwavelength slit in nonsymmetric metallic gratings (2011), in: Optics Letters, 35(2597-2599) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2008), in: J Applied Physics, 101(123502) |
| , , , , , and , Effects of thermal annealing on the morphology of the AlxGa(1-x)N films (2011), in: Materials Science in Semiconductor Processing, 12(238-242) |
| , , , , , and , Effects of thermal annealing on the morphology of the AlxGa(1-x)N films (2011), in: Materials Science in Semiconductor Processing, 12(238-242) |
| , , , , , , , , and , Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7) |
| , , , , , , , , and , Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2011), in: J Applied Physics, 108(013712-1--7) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , , and , The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| and , Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructures (2010), in: Optoelectronics and Advances Materials-Rapid Communications, 3(904-909) |
| and , Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructures (2010), in: Optoelectronics and Advances Materials-Rapid Communications, 3(904-909) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , and , A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs (2010), in: Microelectronics Journal, 40(413-417) |
| , and , A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs (2010), in: Microelectronics Journal, 40(413-417) |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2010), in: J Applied Physics, 105(093701-1--6) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , and , Resonant excitation of surface plasmons in one-dimensional metallic grating structures at microwave frequencies (2006), in: J of Optics A - Pure and Applied Optics, 7(159-164) |
| , and , Resonant excitation of surface plasmons in one-dimensional metallic grating structures at microwave frequencies (2006), in: J of Optics A - Pure and Applied Optics, 7(159-164) |
| , , , and , Enhanced directed emission from metamaterial based radiation source (2008), in: Applied Physics Letters, 92(204103-1--3) |
[DOI] |
| and , Isolation and one-way effects in diffraction on dielectric gratings with plasmonic inserts (2009), in: Optics Express, 17(278-292) |
[DOI] |
| and , Unidirectional transmission in non-symmetric gratings containing metallic layers (2009), in: Optics Express, 17(13335-13345) |
[DOI] |
| , and , Toward photonic crystal based spatial filters with wide angle ranges of total transmission (2009), in: Applied Physics Letters, 94(181101-1--3) |
[DOI] |
| , and , Non-ideal cloaking based on Fabry-Perot resonances in single-layer high-index dielectric shells (2009), in: Optics Express, 17(16869-16876) |
[DOI] |
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| , , and , High performance A1xGa1-xN-based avalanche photodiodes (2008), in: Photonics and Nanostructures, 5(140-144) |
| , , and , High performance A1xGa1-xN-based avalanche photodiodes (2008), in: Photonics and Nanostructures, 5(140-144) |
| , , , , , and , High bandwidth-effiency solar-blind A1GaN Schottky photodiodes with low dark current (2005), in: Solid State Electronics, 49(117-122) |
| , , , , , and , High bandwidth-efficiency solar-blind A1GaN Schottky photodiodes with low dark current (2005), in: Solid State Electronics, 49(117-122) |
| , , and , Solar-blind AlGaN-based p-I-n photodetectors with high breakdown voltage and detectivity (2009), in: Applied Physics Letters, 92(103502-1--3) |
| , , , and , A Planar Metamaterial with Dual-Band Double-Negative Response at EHF (2011), in: IEEE J of Selected Topics in Quantum Electronics, 16(376-379) |
| , , , , and , Simulation and micro-fabrication of optically switchable split ring resonators (2008), in: Photonics and Nanostructures, 5(106-112) |
| , , , , and , Simulation and micro-fabrication of optically switchable split ring resonators (2008), in: Photonics and Nanostructures, 5(106-112) |
| , , and , AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain (2008), in: Applied Physics Letters, 90(163506-1--3) |
| , , , , and , Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes (2007), in: Applied Physics Letters, 89(183524-1--3) |
| , , , , and , The behavior of the I-V-T characteristics of inhomogeneous (Ni/Au)-Al0.3Ga0.7N/AIN/GaN heterostructures at high temperatures (2007), in: J Applied Physics, 102(054510-1--8) |
[DOI] |
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