Kasap, M. - A Web Based Annotated Bibliography - Aigaion 2.0

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First name(s):	M.
Last name(s):	Kasap

Lisesivdin, S.B., Yildiz, A., Balkan, N., Kasap, M., Ozcelik, S. and Ozbay, E., Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2011), in: J Applied Physics, 108(013712-1--7)

Lisesivdin, S.B., Yildiz, A., Balkan, N., Kasap, M., Ozcelik, S. and Ozbay, E., Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2010), in: J Applied Physics, 108(013712-1--7)

[DOI]

Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B. and Ozcelik, S., Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599)

Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B. and Ozcelik, S., Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599)

Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in In_xAl_1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)

Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in In_xAl_1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)

Atmaca, G., Elibol, K., Lisesivdin, S.B., Kasap, M. and Ozbay, E., Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) (2010), in: J of Optoelectronics and Advanced Materials, 11(578-582)

Atmaca, G., Elibol, K., Lisesivdin, S.B., Kasap, M. and Ozbay, E., Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) (2010), in: J of Optoelectronics and Advanced Materials, 11(578-582)

Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)

Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)

[DOI]

Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7)

Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7)

[DOI]

Lisesivdin, S.B., Demirezen, S., Caliskan, M.D., Yildiz, A., Kasap, M., Ozcelik, S. and Ozbay, E., Growth parameter investigation of AI_0.25Ga_0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7)

Lisesivdin, S.B., Demirezen, S., Caliskan, M.D., Yildiz, A., Kasap, M., Ozcelik, S. and Ozbay, E., Growth parameter investigation of AI_0.25Ga_0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7)

Lisesivdin, S.B., Arslan, E., Kasap, M., Ozcelik, S. and Ozbay, E., Self-Consistent scattering analysis of Al_0.2Ga_0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5)

Lisesivdin, S.B., Arslan, E., Kasap, M., Ozcelik, S. and Ozbay, E., Self-Consistent scattering analysis of Al_0.2Ga_0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5)

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3)

[DOI]

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., The effect of strain relaxation on electron transport in undoped Al_0.25Ga_0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137)

Lisesivdin, S.B., Altuntas, H., Yildiz, A., Kasap, M., Ozbay, E. and Ozcelik, S., DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611)

Lisesivdin, S.B., Altuntas, H., Yildiz, A., Kasap, M., Ozbay, E. and Ozcelik, S., DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611)

Lisesivdin, S.B., Balkan, N., Makarovsky, O., Patane, A., Yildiz, A., Caliskan, M.D., Kasap, M., Ozcelik, S. and Ozbay, E., Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2010), in: J Applied Physics, 105(093701-1--6)

Lisesivdin, S.B., Balkan, N., Makarovsky, O., Patane, A., Yildiz, A., Caliskan, M.D., Kasap, M., Ozcelik, S. and Ozbay, E., Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2009), in: J Applied Physics, 105(093701-1--6)

[DOI]

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., The effect of strain relaxation on electron transport in undoped Al_0.25Ga_0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137)

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3)

[DOI]

Acar, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044)

Acar, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044)

Lisesivdin, S.B., Acar, S., Kasap, M., Ozcelik, S., Gokden, S. and Ozbay, E., Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0,25Ga_0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548)

Lisesivdin, S.B., Acar, S., Kasap, M., Ozcelik, S., Gokden, S. and Ozbay, E., Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0,25Ga_0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548)

Yildiz, A., Lisesivdin, S.B., Kasap, M., Ozcelik, S., Ozbay, E. and Balkan, N., Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563)

Yildiz, A., Lisesivdin, S.B., Kasap, M., Ozcelik, S., Ozbay, E. and Balkan, N., Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563)

Yildiz, A., Lisesivdin, S.B., Tasli, P., Ozbay, E. and Kasap, M., Determination of the critical indium composition corresponding to the metal-insulator transition in In_xGa_1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841)

Yildiz, A., Lisesivdin, S.B., Tasli, P., Ozbay, E. and Kasap, M., Determination of the critical indium composition corresponding to the metal-insulator transition in In_xGa_1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841)

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