Publications of Ozturk, M.K.
2011
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
2010
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
2009
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
2008
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2008), in: J Applied Physics, 101(123502) |
2007
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2007), in: J Applied Physics, 101(123502) |
[DOI] |