Dear guest, welcome to this publication database. As an anonymous user, you will probably not have edit rights. Also, the collapse status of the topic tree will not be persistent. If you like to have these and other options enabled, you might ask Admin for a login account.
| This site is powered by Aigaion - A PHP/Web based management system for shared and annotated bibliographies. For more information visit www.aigaion.nl. |
|
Publications of Ozturk, M.K.
2011
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
2010
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
2009
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
2008
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2008), in: J Applied Physics, 101(123502) |
2007
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , and , A study of semi-insulating GaN grown on AIN buffer/sapphire substrate by metalorganic chemical vapor deposition (2007), in: J of Crystal Growth, 293(273-277) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2007), in: J Applied Physics, 101(123502) |
[DOI] |