Lisesivdin, S.B. - A Web Based Annotated Bibliography - Aigaion 2.0

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First name(s):	S.B.
Last name(s):	Lisesivdin

Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B. and Ozcelik, S., Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599)

Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B. and Ozcelik, S., Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599)

Yildiz, A., Lisesivdin, S.B., Tasli, P., Ozbay, E. and Kasap, M., Determination of the critical indium composition corresponding to the metal-insulator transition in In_xGa_1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841)

Yildiz, A., Lisesivdin, S.B., Tasli, P., Ozbay, E. and Kasap, M., Determination of the critical indium composition corresponding to the metal-insulator transition in In_xGa_1-xN (0.06<=x<=0.135) layers (2011), in: Current Applied Physics, 10(838-841)

Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in In_xAl_1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)

Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in In_xAl_1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)

Yu, H., Lisesivdin, S.B., Bolukbas, B., Kelekci, O., Ozturk, M.K., Ozcelik, S., Caliskan, D., Ozturk, M., Cakmak, H., Demirel, P. and Ozbay, E., Improvement of breakdown characteristics in AlGaN/GaN/Al_xGa_1-xN HEMT based on a grading Al_xGa_1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596)

Yu, H., Lisesivdin, S.B., Bolukbas, B., Kelekci, O., Ozturk, M.K., Ozcelik, S., Caliskan, D., Ozturk, M., Cakmak, H., Demirel, P. and Ozbay, E., Improvement of breakdown characteristics in AlGaN/GaN/Al_xGa_1-xN HEMT based on a grading Al_xGa_1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596)

Yildiz, A., Lisesivdin, S.B., Kasap, M., Ozcelik, S., Ozbay, E. and Balkan, N., Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563)

Yildiz, A., Lisesivdin, S.B., Kasap, M., Ozcelik, S., Ozbay, E. and Balkan, N., Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563)

Gokden, S., Tulek, R., Teke, A., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7)

Gokden, S., Tulek, R., Teke, A., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel (2011), in: Semicond. Sci. Technol., 25(045024-1--7)

Lisesivdin, S.B., Yildiz, A., Balkan, N., Kasap, M., Ozcelik, S. and Ozbay, E., Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2011), in: J Applied Physics, 108(013712-1--7)

Tasli, P., Lisesivdin, S.B., Yildiz, A., Kassap, M., Arslan, E., Ozcelik, S. and Ozbay, E., Well parameters of two-dimensional electron gas in Al_0.88In_0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139)

Tasli, P., Lisesivdin, S.B., Yildiz, A., Kassap, M., Arslan, E., Ozcelik, S. and Ozbay, E., Well parameters of two-dimensional electron gas in Al_0.88In_0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139)

Lisesivdin, S.B., Balkan, N. and Ozbay, E., A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs (2010), in: Microelectronics Journal, 40(413-417)

Lisesivdin, S.B., Balkan, N. and Ozbay, E., A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs (2010), in: Microelectronics Journal, 40(413-417)

Lisesivdin, S.B., Altuntas, H., Yildiz, A., Kasap, M., Ozbay, E. and Ozcelik, S., DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611)

Lisesivdin, S.B., Altuntas, H., Yildiz, A., Kasap, M., Ozbay, E. and Ozcelik, S., DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611)

Lisesivdin, S.B. and Ozbay, E., Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In_0.18AI_0.82N/GaN based heterostructures (2010), in: Optoelectronics and Advances Materials-Rapid Communications, 3(904-909)

Lisesivdin, S.B. and Ozbay, E., Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In_0.18AI_0.82N/GaN based heterostructures (2010), in: Optoelectronics and Advances Materials-Rapid Communications, 3(904-909)

Lisesivdin, S.B., Balkan, N., Makarovsky, O., Patane, A., Yildiz, A., Caliskan, M.D., Kasap, M., Ozcelik, S. and Ozbay, E., Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2010), in: J Applied Physics, 105(093701-1--6)

Atmaca, G., Elibol, K., Lisesivdin, S.B., Kasap, M. and Ozbay, E., Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) (2010), in: J of Optoelectronics and Advanced Materials, 11(578-582)

Atmaca, G., Elibol, K., Lisesivdin, S.B., Kasap, M. and Ozbay, E., Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs) (2010), in: J of Optoelectronics and Advanced Materials, 11(578-582)

Lisesivdin, S.B., Yildiz, A., Balkan, N., Kasap, M., Ozcelik, S. and Ozbay, E., Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2010), in: J Applied Physics, 108(013712-1--7)

[DOI]

Teke, A., Gokden, S., Tulek, R., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12)

Teke, A., Gokden, S., Tulek, R., Leach, J.H., Fan, Q., Xie, J., Ozgur, U., Morkoc, H., Lisesivdin, S.B. and Ozbay, E., The effect of AIN interlayer thicknesses on scattering processes in lattice-matched AllN/GaN two-dimensional electron gas heterostructures (2010), in: New J of Physics, 11(063031-1--12)

Acar, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044)

Acar, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044)

Lisesivdin, S.B., Demirezen, S., Caliskan, M.D., Yildiz, A., Kasap, M., Ozcelik, S. and Ozbay, E., Growth parameter investigation of AI_0.25Ga_0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7)

Lisesivdin, S.B., Demirezen, S., Caliskan, M.D., Yildiz, A., Kasap, M., Ozcelik, S. and Ozbay, E., Growth parameter investigation of AI_0.25Ga_0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7)

Lisesivdin, S.B., Balkan, N., Makarovsky, O., Patane, A., Yildiz, A., Caliskan, M.D., Kasap, M., Ozcelik, S. and Ozbay, E., Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2009), in: J Applied Physics, 105(093701-1--6)

[DOI]

Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7)

Lisesivdin, S.B., Acar, S., Kasap, M., Ozcelik, S., Gokden, S. and Ozbay, E., Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0,25Ga_0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548)

Lisesivdin, S.B., Acar, S., Kasap, M., Ozcelik, S., Gokden, S. and Ozbay, E., Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al_0,25Ga_0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548)

Lisesivdin, S.B., Arslan, E., Kasap, M., Ozcelik, S. and Ozbay, E., Self-Consistent scattering analysis of Al_0.2Ga_0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5)

Lisesivdin, S.B., Arslan, E., Kasap, M., Ozcelik, S. and Ozbay, E., Self-Consistent scattering analysis of Al_0.2Ga_0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5)

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., The effect of strain relaxation on electron transport in undoped Al_0.25Ga_0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137)

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., The effect of strain relaxation on electron transport in undoped Al_0.25Ga_0.75N/GaN heterostructures (2008), in: Physica B, 399(132-137)

Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7)

[DOI]

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3)

[DOI]

Lisesivdin, S.B., Yildiz, A., Acar, S., Kasap, M., Ozcelik, S. and Ozbay, E., Electronic transport characterization of AlGaN/GaN heterostructures using quantitative mobility spectrum analysis (2007), in: Applied Physics Letters, 91(102113-1--3)

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