Arslan, E. - A Web Based Annotated Bibliography - Aigaion 2.0

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First name(s):	E.
Last name(s):	Arslan

Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in In_xAl_1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)

Lisesivdin, S.B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S. and Ozbay, E., Double subband occupation of the two-dimensional electron gas in In_xAl_1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575)

Arslan, E., Safak, Y., Tascioglu, I., Uslu, H. and Ozbay, E., Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AIN/GaN heterostructures (2011), in: Microelectronic Engineering, 87(1997-2001)

Arslan, E., Safak, Y., Tascioglu, I., Uslu, H. and Ozbay, E., Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AIN/GaN heterostructures (2011), in: Microelectronic Engineering, 87(1997-2001)

Arslan, E., Butun, S., Safak, Y. and Ozbay, E., Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis (2011), in: J of Electronic Materials, 39(2681-2686)

Arslan, E., Butun, S., Safak, Y. and Ozbay, E., Investigation of Trap States in AllnN/AIN/GaN Heterostructures by Frequency-Dependent Admittance Analysis (2011), in: J of Electronic Materials, 39(2681-2686)

Arslan, E., Safak, Y., Altindal, S., Kelekci, O. and Ozbay, E., Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AýN/GaN heterostructures (2011), in: J of Non-crystalline Solids, 356(1006-1011)

Arslan, E., Safak, Y., Altindal, S., Kelekci, O. and Ozbay, E., Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AýN/GaN heterostructures (2011), in: J of Non-crystalline Solids, 356(1006-1011)

Tasli, P., Lisesivdin, S.B., Yildiz, A., Kassap, M., Arslan, E., Ozcelik, S. and Ozbay, E., Well parameters of two-dimensional electron gas in Al_0.88In_0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139)

Tasli, P., Lisesivdin, S.B., Yildiz, A., Kassap, M., Arslan, E., Ozcelik, S. and Ozbay, E., Well parameters of two-dimensional electron gas in Al_0.88In_0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139)

Arslan, E., Altindal, S., Ozcelik, S. and Ozbay, E., Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2010), in: J Applied Physics, 105(023705-1--7)

Arslan, E., Butun, S. and Ozbay, E., Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al_0.83ln_0.17N/AIN/GaN heterostructures (2010), in: Applied Physics Letters, 94(142106-1--3)

Arslan, E., Ozturk, M.K., Ozcelik, S. and Ozbay, E., The effect of Si_xN_y interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477)

Arslan, E., Ozturk, M.K., Ozcelik, S. and Ozbay, E., The effect of Si_xN_y interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477)

Arslan, E., Duygulu, O., Kaya, A.A., Teke, A., Ozcelik, S. and Ozbay, E., The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN_x interlayers (2010), in: Superlattices and Microstructures, 46(846-857)

Arslan, E., Duygulu, O., Kaya, A.A., Teke, A., Ozcelik, S. and Ozbay, E., The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiN_x interlayers (2010), in: Superlattices and Microstructures, 46(846-857)

Arslan, E., Altindal, S., Ozcelik, S. and Ozbay, E., Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6)

Arslan, E., Altindal, S., Ozcelik, S. and Ozbay, E., Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6)

Arslan, E., Ozturk, M.K., Teke, A., Ozcelik, S. and Ozbay, E., Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10)

Arslan, E., Ozturk, M.K., Teke, A., Ozcelik, S. and Ozbay, E., Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10)

Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)

[DOI]

Tulek, R., Ilgaz, A., Gokden, S., Teke, A., Ozturk, M.K., Kasap, M., Ozcelik, S., Arslan, E. and Ozbay, E., Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707)

Arslan, E., Altindal, S., Ozcelik, S. and Ozbay, E., Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2009), in: J Applied Physics, 105(023705-1--7)

[DOI]

Arslan, E., Butun, S. and Ozbay, E., Leakage current by Frenkel-Poole emission in Ni/Au Schottky contacts on Al_0.83ln_0.17N/AIN/GaN heterostructures (2009), in: Applied Physics Letters, 94(142106-1--3)

[DOI]

Arslan, E., Ozturk, M.K., Duygulu, O., Kaya, A.A., Ozcelik, S. and Ozbay, E., The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82)

Arslan, E., Ozturk, M.K., Duygulu, O., Kaya, A.A., Ozcelik, S. and Ozbay, E., The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82)

Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7)

Lisesivdin, S.B., Arslan, E., Kasap, M., Ozcelik, S. and Ozbay, E., Self-Consistent scattering analysis of Al_0.2Ga_0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5)

Lisesivdin, S.B., Arslan, E., Kasap, M., Ozcelik, S. and Ozbay, E., Self-Consistent scattering analysis of Al_0.2Ga_0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5)

Arslan, E., Butun, S., Lisesivdin, S.B., Kasap, M., Ozcelik, S. and Ozbay, E., The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2008), in: J Applied Physics, 103(103701-1--7)

[DOI]

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