Publications of Ozcelik, S.
2011
| , , , , and , Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599) |
| , , , , and , Contributions of impurity band and electron-electron interactions to magnetoconductance in AlGaN (2011), in: Philosophical Magazine, 90(3591-3599) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , , and , Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AIN/GaN/AIN heterostructures with a low indium content (0.064<=x<=0.140) barrier (2011), in: Thin Solid Films, 518(5572-5575) |
| , , , , , and , Effects of thermal annealing on the morphology of the AlxGa(1-x)N films (2011), in: Materials Science in Semiconductor Processing, 12(238-242) |
| , , , , , and , Effects of thermal annealing on the morphology of the AlxGa(1-x)N films (2011), in: Materials Science in Semiconductor Processing, 12(238-242) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , , , , , , and , Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1-xN HEMT based on a grading AlxGa1-xN buffer layer (2011), in: Physica Status Solidi A, 207(2593-2596) |
| , , , , and , Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563) |
| , , , , and , Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method (2011), in: Applied Physics A Materials Science & Processing, 98(557-563) |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2011), in: J Applied Physics, 108(013712-1--7) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , and , Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction (2011), in: J of Mater Sci: Mater Electron, 21(185-191) |
| , , , , , and , Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139) |
| , , , , , and , Well parameters of two-dimensional electron gas in Al0.88In0.12N/AIN/GaN/AIN heterostructures grown by MOCVD (2011), in: Crystal Research Technology, 45(133-139) |
2010
| , , and , Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2010), in: J Applied Physics, 105(023705-1--7) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , and , DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content (2010), in: Superlattices and Microstructures, 45(604-611) |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2010), in: J Applied Physics, 105(093701-1--6) |
| , , , , and , Scattering anlaysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method (2010), in: J Applied Physics, 108(013712-1--7) |
[DOI] |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , and , The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (2010), in: Current Applied Physics, 9(472-477) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , , , and , The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers (2010), in: Superlattices and Microstructures, 46(846-857) |
| , , and , Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6) |
| , , and , Tunneling current via dislocations in Schottky diodes on AllNN/AIN/GaN heterostructures (2010), in: Semicond. Sci. Technol., 24(075003-1--6) |
2009
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , and , Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD (2009), in: J of Physics D, 41(155317-1--10) |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
[DOI] |
| , , , , , , , and , Comparison of the transport properties of high quality AlGaN/AlN/GaN and AllnN/AlN/GaN two-dimensional electron gas heterostructures (2009), in: J Applied Physics, 105(013707) |
| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , , and , Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (2009), in: Thin Solid Films, 516(2041-2044) |
| , , and , Discolation-governed current-transport mechanism in (Ni/Au)-AlGaN/AIN/GaN heterostructures (2009), in: J Applied Physics, 105(023705-1--7) |
[DOI] |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , , , , and , Growth parameter investigation of AI0.25Ga0.75N/GaN/AIN heterostructures with Hall effect measurements (2009), in: Semicond. Sci. Technol., 23(095008-1--7) |
| , , , , , , , and , Large zero-field spin splitting in AlGaN/AlN/GaN/AIN heterostructures (2009), in: J Applied Physics, 105(093701-1--6) |
[DOI] |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| , , , , and , Surface morphology of AlO.3Ga0.7N/Al203-High Electron Mobility Transistor structure (2009), in: J of Nanoscience and Nanotechnology, 8(640-644) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate (2009), in: Applied Physics A Materials Science & Processing, 94(73-82) |
| , , , , and , The persistent photoconductivity effect in AIGaN/GaN heterostructures grown on sapphire and SiC substrates (2009), in: J Applied Physics, 103(103701-1--7) |
| , , , and , The Profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2009), in: Microelectronic Engineering, 85(2316-2321) |
| , , , and , The Profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2009), in: Microelectronic Engineering, 85(2316-2321) |
2008
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , , and , Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0,25Ga0,75N/GaN heterostructures (2008), in: Semicond. Sci. Technol., 22(543-548) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , and , Self-Consistent scattering analysis of Al0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates usding photo-Hall effect measurements (2008), in: J of Physics Condensed Matter, 20(045208-1--5) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , , , , and , Structural and optical properties of an InxGa1-xN/GaN nanostructure (2008), in: Surface Science, 601(3892-3897) |
| , , , , and , Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AIN buffer and interlayer (2008), in: J Applied Physics, 101(123502) |